High-speed, high-current-gain p-n-p InP/InGaAs heterojunction bipolar transistors

Author

Lunardi, L.M. ; Chandrasekhar, S. ; Hamm, R.A.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

14

Issue

1

fYear

1993

Firstpage

19

Lastpage

21

Abstract

p-n-p InP/InGaAs heterojunction bipolar transistors (HBTs) are reported for the first time. The transistors, grown by metal organic molecular beam epitaxy (MOMBE), exhibited maximum DC current gain values up to 420 for a base doping level of 4*10/sup 18/ cm/sup -3/. Small-signal measurements on self-aligned transistors with 3- mu m*8- mu m emitter area indicated the unity gain cutoff frequency value of 10.5 GHz and the inferred maximum frequency of oscillation of 25 GHz. The results clearly demonstrate the feasibility of complementary integrated circuits in the InP material system.<>

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; 10.5 GHz; 25 GHz; 3 micron; 8 micron; DC current gain values; InP material system; InP-InGaAs; MOMBE; base doping level; complementary integrated circuits; heterojunction bipolar transistors; high-current-gain; maximum frequency of oscillation; metal organic molecular beam epitaxy; p-n-p HBTs; self-aligned transistors; semiconductors; unity gain cutoff frequency; Area measurement; Cutoff frequency; Doping; Frequency measurement; Gain measurement; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated circuit measurements; Molecular beam epitaxial growth;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215087

Filename

215087