Title :
High-speed p/sup +/ GaInAs-n InP heterojunction JFET´s (HJFET´s) grown by MOCVD
Author :
Hashemi, Majid M. ; Shealy, J.B. ; DenBaars, Steve P. ; Mishra, Umesh K.
Author_Institution :
California Univ., Santa Barbara, CA, USA
Abstract :
The authors report the high-frequency characteristics of a new type of InP-JFET having p/sup +/ GaInAs as the gate material grown by MOCVD (metalorganic chemical vapor deposition) using tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBA) as the alternative source for phosphine and arsine, respectively. Using selective wet chemical etching, heterojunction JFETs (HJFETs) with gate length of 0.6 mu m led to a unity current gain cutoff frequency and power gain cutoff frequency of 14.3 and 37.5 GHz, respectively. The large valence band discontinuity ( triangle E/sub v/ approximately=0.37 eV) considerably suppresses hole injection into the channel in the HJFET as compared to homojunction InP-JFETs, making the HJFET a preferred device for high-speed logic circuits based on JFET technology.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; junction gate field effect transistors; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 14.3 GHz; 37.5 GHz; GaInAs-InP heterojunction; HJFET; III-V semiconductor; MOCVD; current gain cutoff frequency; high-frequency characteristics; high-speed logic circuits; large valence band discontinuity; p/sup +/-n heterojunction; power gain cutoff frequency; selective wet chemical etching; Chemicals; Cutoff frequency; Fabrication; Heterojunctions; Indium phosphide; Logic circuits; MOCVD; Radio frequency; Thermal conductivity; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
