Title :
High-temperature operation of polycrystalline diamond field-effect transistors
Author :
Tessmer, A.J. ; Plano, L.S. ; Dreifus, D.L.
Author_Institution :
Kobe Steel USA Inc., Research Triangle Park, NC, USA
Abstract :
Operation of polycrystalline diamond field-effect transistors (FETs) at temperatures up to 285 degrees C and drain-to-source voltages of up to 100 V has been demonstrated. The devices were fabricated from B-doped polycrystalline diamond grown by a microwave plasma-enhanced chemical vapor deposition (CVD) technique. At 150 degrees C, the devices exhibited saturation of drain current and a peak transconductance of 65 nS/mm. These are the first polycrystalline diamond devices to demonstrate saturation. Device characteristics at 250 degrees C also show saturation and increased transconductance of 300 nS/mm. Characterization was not performed at temperatures exceeding 285 degrees C due to gate leakage current above 10 nA.<>
Keywords :
diamond; elemental semiconductors; high-temperature techniques; insulated gate field effect transistors; 100 V; 285 C; 300 nS/mm; 65 nS/mm; C; C:B; drain current saturation; drain-to-source voltages; elemental semiconductor; high-temperature operation; microwave plasma-enhanced chemical vapor deposition; polycrystalline diamond field-effect transistors; saturation; transconductance; Chemical vapor deposition; FETs; Microwave devices; Microwave theory and techniques; Plasma chemistry; Plasma devices; Plasma properties; Plasma temperature; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
