Quality of gate oxides grown on state-of-the-art SIMOX and ZMR SOI substrates

Author

Karulkar, Pramod C.

Author_Institution

MIT Lincoln Lab., Lexington, MA, USA

Volume

14

Issue

2

fYear

1993

Firstpage

80

Lastpage

82

Abstract

The quality of 25-nm gate oxides formed on state-of-the-art SIMOX and ZMR silicon-on-insulator (SOI) substrates was studied using NMOSFETs. Circular, edgeless, and conventional island isolated devices were used. Devices fabricated on bulk silicon wafers were studied for comparison. I-V characteristics, breakdown voltages, charge trapping, and charge to breakdown were characterized. The results clearly demonstrated that the quality of SIMOX and ZMR wafers and especially of the top Si surface was as good as that of bulk silicon. The quality of the gate oxides formed on island isolated devices was poor due to defective oxide formed on the sidewalls. A comparison of circular, edgeless MOSFETs and island isolated MOSFETs can be used to optimize island etching, sidewall cleaning, and gate oxidation processes.<>

Keywords

SIMOX; electric breakdown of solids; insulated gate field effect transistors; oxidation; recrystallisation; semiconductor-insulator boundaries; solid phase epitaxial growth; Fowler-Nordheim tunnelling; I-V characteristics; NMOSFET; SIMOX substrates; Si; Si-SiO/sub 2/; ZMR SOI substrates; breakdown voltages; charge to breakdown; charge trapping; circular devices; edgeless devices; gate oxide quality; island isolated devices; Breakdown voltage; Cleaning; Electric breakdown; Fabrication; MOSFET circuits; Oxidation; Radioactive decay; Silicon on insulator technology; Substrates; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215115

Filename

215115