Epitaxial Integrated E-dE Position Sensitive Silicon Detectors

The epitaxial integrated E-dE position sensitive silicon detector has been developed as an extension of the epitaxial integrated E-dE silicon detector. The charge dividing resistor is produced by evaporation of Pd on the E side of the detector. This Pd evaporated layer acts as the surface barrier electrode of the E detector. The good position sensing characteristics will be expected by using the charge dividing resistor made of a P-type epitaxial silicon layer grown on the substrate instead of the evaporated Pd layer.