Title :
Low threshold current density 1.3 μm InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy
Author :
Chang, F.Y. ; Lee, J.D. ; Lin, H.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy (MBE) are reported. The laser emits 1.296 μm light output and demonstrates a very low threshold current density of 111 A/cm2. This is the lowest reported value of GaAs-based 1.3 μm quantum dot lasers with InGaP cladding layers.
Keywords :
III-V semiconductors; claddings; current density; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; quantum dot lasers; semiconductor epitaxial layers; semiconductor growth; InAs-InGaAs-InGaP; InAs/InGaAs quantum dot lasers; InGaP cladding layers; gas source molecular beam epitaxy; low threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040127
