Title :
Effect of uniform stress on Si p-n junctions
Author :
Brooks, A.D. ; Wortman, J.J.
fDate :
7/1/1968 12:00:00 AM
Abstract :
A new method is described for produchrg large stress levels in semiconductor devices. The relative change in breakdown voltage induced by uniaxial stress σ was found to be (ΔV/VB)/σ≃-0.48 × 10-12, where stress is given in dynes/cm2. Experimental results are compared with the energy band model for the piezojunction effect.
Keywords :
Anisotropic magnetoresistance; Bonding; Diodes; Electric breakdown; P-n junctions; Silicon; Solids; Steel; Strain measurement; Stress;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6527
