• DocumentCode
    898725
  • Title

    Modeling of a Dual-Drain NMOS Magnetic-Field Sensor

  • Author

    Nathan, A. ; Andor, L. ; Baltes, H.P. ; Schmidt-Weinmar, H.G.

  • Volume
    20
  • Issue
    3
  • fYear
    1985
  • fDate
    6/1/1985 12:00:00 AM
  • Firstpage
    819
  • Lastpage
    821
  • Abstract
    We present numerical results for the potential, current, and surface charge distributions as well as the sensitivity of a magnetic-field-sensitive split-drain n-channel MOSFET´s operating in the linear region. We also present a suitable circuit configuration that incorporates this device and calculate the overall sensitivity of the resulting magnetic-field-sensitive circuit. Optimization of the device geometry is discussed.
  • Keywords
    MOSFET circuits; Magnetic field measurement; Modeling; Difference equations; Doping; Electrodes; Finite difference methods; Geometry; MOS devices; MOSFET circuits; Magnetic sensors; Magnetic separation; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1985.1052390
  • Filename
    1052390
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=898725