Large suspended inductors on silicon and their use in a 2- mu m CMOS RF amplifier

Author

Chang, J.Y-C. ; Abidi, Asad A. ; Gaitan, Michael

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

14

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

246

Lastpage

248

Abstract

Large spiral inductors encased in oxide over silicon are shown to operate beyond the UHF band when the capacitance and loss resistance are greatly reduced by selective removal of the underlying substrate. Using a 100-nH inductor whose self-resonance lies at 3 GHz, a balanced tuned amplifier with a gain of 14 dB centered at 770 MHz has been implemented in a standard digital 2- mu m CMOS IC process. The core amplifier noise figure is 6 dB, and the power dissipation is 7 mW for a 3-V supply.<>

Keywords

CMOS integrated circuits; differential amplifiers; elemental semiconductors; inductors; linear integrated circuits; radiofrequency amplifiers; semiconductor-insulator boundaries; silicon; silicon compounds; 14 dB; 2 micron; 6 dB; 7 mW; 770 MHz; CMOS RF amplifier; Si-SiO/sub 2/; balanced tuned amplifier; capacitance; core amplifier noise figure; large spiral inductors; loss resistance; power dissipation; selective substrate removal; self-resonance; CMOS digital integrated circuits; CMOS integrated circuits; CMOS process; Capacitance; Gain; Inductors; Noise figure; Power amplifiers; Silicon; Spirals;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215182

Filename

215182