DocumentCode
898846
Title
Stochastic geometry effects in MOS transistor
Author
De Mey, G.
Volume
20
Issue
4
fYear
1985
fDate
8/1/1985 12:00:00 AM
Firstpage
865
Lastpage
870
Abstract
The influence of random edge effects and oxide thickness variations on MOS transistor characteristics is investigated. The variance of the drain current is calculated as a function of the parameters of the stochastic geometry effects. Finally, the relation with the scaling down of the transistor dimensions is also included.
Keywords
Insulated gate field effect transistors; Semiconductor device models; insulated gate field effect transistors; semiconductor device models; Capacitance; Conductivity; Equations; Fluctuations; Geometry; Large scale integration; MOS capacitors; MOSFETs; Stochastic processes; Very large scale integration;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1985.1052401
Filename
1052401
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