Title :
Behavior of analog MOS integrated circuits at high temperatures
Author :
Hosticka, Bedrich J. ; Dalsass, K.-G. ; Krey, D. ; Zimmer, G.
fDate :
8/1/1985 12:00:00 AM
Abstract :
Thermal effects on small-signal characteristics of MOS transistors are studied and parameters of MOS amplifiers operating at high temperatures are calculated. The predicted performance has been experimentally verified and high-temperature measurements of an operational amplifier and a switched-capacitor precision amplifier are presented.
Keywords :
Amplifiers; Field effect integrated circuits; Insulated gate field effect transistors; Linear integrated circuits; Operational amplifiers; Semiconductor device models; Switched capacitor networks; amplifiers; field effect integrated circuits; insulated gate field effect transistors; linear integrated circuits; operational amplifiers; semiconductor device models; switched capacitor networks; Equations; Integrated circuit measurements; MOS integrated circuits; MOSFET circuits; Operational amplifiers; Photonic band gap; Semiconductor device measurement; Temperature dependence; Threshold voltage; Transconductance;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1985.1052402
