Temperature dependence of MOSFET substrate current

Author

Huang, J.H. ; Zhang, G.B. ; Liu, Z.H. ; Duster, J. ; Wann, S.J. ; Ko, Ping ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

14

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

268

Lastpage

271

Abstract

Hitherto, theoretical models for MOSFET substrate current predicted that substrate current is a strong function of temperature. However, experimental data presented in this and previous studies show that the ratio of substrate current to drain current is insensitive to temperature over the range 77 to 300 K. The authors propose a modified model for an electron mean-free path (MFP) in the substrate current based on the concept of energy relaxation. The different between the energy and momentum relaxation MFP is clarified, and it is shown that a substrate current model with modified MFP can explain the temperature dependence of the substrate current.<>

Keywords

carrier mean free path; hot carriers; impact ionisation; insulated gate field effect transistors; semiconductor device models; 77 to 300 K; MOSFET; NMOSFET; electron mean-free path; energy relaxation; hot carrier effects; impact ionization; model; momentum relaxation MFP; substrate current; temperature dependence; Electrons; Impact ionization; Impurities; MOSFET circuits; Optical scattering; Predictive models; Substrates; Temperature dependence; Temperature sensors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215189

Filename

215189