Current-crowding effect in diagonal MOSFET´s

Author

Hwang, Hyunsang ; Shin, Hyungsoon ; Kang, Dae-Gwan ; Ju, Dong-Hyuk

Author_Institution

GoldStar Electron Co. Ltd., Seoul, South Korea

Volume

14

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

289

Lastpage

291

Abstract

Electrical and reliability characteristics of diagonally shaped n-channel MOSFETs have been extensively investigated. Compared with the conventional device structure, diagonal MOSFETs show longer device lifetime under peak I/sub sub/ condition (V/sub g/=0.5 V/sub d/). However, in the high-gate-bias region (V/sub g/=V/sub d/), diagonal MOSFETs exhibit a significantly higher degradation rate. From the I/sub sub/ versus gate voltage characteristics, this larger degradation rate under high gate bias is concluded to be due mainly to the current-crowding effect at the drain corner. For a cell-transistor operating condition (V/sub g/>V/sub d/), this current-crowding effect in the diagonal transistor can be a serious reliability concern.<>

Keywords

impact ionisation; insulated gate field effect transistors; reliability; semiconductor device testing; I-V characteristics; cell-transistor operating condition; current-crowding effect; degradation rate; device lifetime; diagonally shaped n-channel MOSFETs; drain corner; high-gate-bias region; impact ionization rate; linear drain current; reliability characteristics; CMOS process; Capacitors; Current measurement; Degradation; Etching; Implants; MOSFET circuits; Random access memory; Simulated annealing; Stress;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215201

Filename

215201