• DocumentCode
    899011
  • Title

    Surface-oriented Gunn-effect oscillator

  • Author

    Foxell, C.A.P. ; Summers, J.G. ; Wilson, K.

  • Author_Institution
    Associated Semiconductor Manufacturers Ltd., Wembley Laboratories, GEC Hirst Research Centre, Wembley, UK
  • Volume
    1
  • Issue
    8
  • fYear
    1965
  • fDate
    10/1/1965 12:00:00 AM
  • Firstpage
    217
  • Abstract
    Coherent Gunn-effect oscillations at 3 Gc/s have been observed between coplanar contacts, with a 30 ¿m separation, on the surface of an epitaxial n-type GaAs wafer. By using this structure the difficulty of preparing thin GaAs wafers necessary for conventional Gunn-effect devices has been avoided; it should be possible to generate frequencies greater than 30 Gc/s using existing photolithographic processes.
  • Keywords
    Gunn effect; semiconductor devices; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19650197
  • Filename
    4231390
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=899011