Extremely low back facet feedback by quantum-confined Stark effect absorption in an edge-emitting light-emitting diode

Author

Fouquet, J.E. ; Sorin, W.V. ; Trott, G.R. ; Ludowise, M.J. ; Braun, D.M.

Author_Institution

Hewlett-Packard Lab., Palo Alto, CA, USA

Volume

5

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

509

Lastpage

511

Abstract

The quantum-confined Stark effect is employed to form an integral reverse-biased absorber in a GaInAsP edge-emitting light-emitting diode. Optical low coherence reflectometry is used to measure the magnitude of reflections through this absorber. Front-facet-back-facet roundtrip reflection magnitudes are below -110 dB in devices having an antireflection coating on the front facet only. All other round trip reflections are below -80 dB. This device provides a wide usable dynamic range in optical low coherence reflectometry measurements.<>

Keywords

III-V semiconductors; Stark effect; antireflection coatings; electro-optical devices; feedback; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; optical films; reflectivity; reflectometry; GaInAsP; LEDs; antireflection coating; edge-emitting; integral reverse-biased absorber; light absorption; light-emitting diode; low back facet feedback; optical low coherence reflectometry; quantum-confined Stark effect absorption; reflections magnitude; roundtrip reflection magnitudes; semiconductors; wide usable dynamic range; Absorption; Indium phosphide; Light emitting diodes; Optical attenuators; Optical feedback; Optical interferometry; Optical reflection; Optical sensors; Photonic band gap; Stark effect;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.215264

Filename

215264