Title :
Ultrafast long-wavelength photodetectors fabricated on low-temperature InGaAs on GaAs
Author :
Lester, L.F. ; Hwang, K.C. ; Ho, P. ; Mazurowski, J. ; Ballingall, J.M. ; Sutliff, John ; Gupta, S. ; Whitaker, J. ; Williamson, S.L.
Author_Institution :
GE Electron. Lab., Syracuse, NY, USA
fDate :
5/1/1993 12:00:00 AM
Abstract :
The authors report the first successful demonstration of a metal-semiconductor-metal photodetector (MSMPD) fabricated on low-temperature InGaAs grown on GaAs by molecular beam epitaxy (MBE) for long-wavelength fiber optic applications. Interdigitated MSMPDs with finger widths and spacings of 0.2, 0.5, 1.0, and 2.0 mu m were tested using a femtosecond pulsed laser and high-speed electrooptic sampling. A FWHM pulsed response of 2 and 1.3 ps was measured for low-temperature In/sub 0.25/Ga/sub 0.75/As and In/sub 0.35/Ga/sub 0.65/As, respectively. The latter is the fastest response reported to data for a photodetector capable of detection to wavelengths as long as 1.3 mu m.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; metal-semiconductor-metal structures; molecular beam epitaxial growth; semiconductor growth; 1.3 micron; 1.3 ps; 2 ps; FWHM pulsed response; GaAs; IR detectors; InGaAs; MBE; femtosecond pulsed laser; finger spacings; finger widths; high-speed electrooptic sampling; interdigitated MSMPDs; long-wavelength fiber optic applications; long-wavelength photodetectors; low-temperature InGaAs; metal-semiconductor-metal photodetector; molecular beam epitaxy; semiconductor growth; semiconductor photodetector fabrication; Fingers; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Optical fibers; Optical pulses; Photodetectors; Pulse measurements; Testing; Ultrafast optics;
Journal_Title :
Photonics Technology Letters, IEEE
