High-power diffraction-limited monolithic broad area master oscillator power amplifier

Author

O´Brien, S. ; Mehuys, D. ; Welch, D.F. ; Parke, R. ; Lang, R.J. ; Scifres, D.

Author_Institution

Spectra Diode Labs., San Jose, CA, USA

Volume

5

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

526

Lastpage

528

Abstract

High-power monolithically integrated broad-area master oscillator power amplifiers (MBA-MOPAs), consisting of a distributed-Bragg-reflector (DBR) laser, a preamplifier, a coherent beam expander, and a broad area power amplifier producing up to 800 mW in a single spectral and spatial mode, are fabricated. The MBA-MOPA operates in an edge-emitting configuration with a primarily single-lobe output having a transverse beam divergence of 0.45 degrees , indicating a uniform phase over the 130- mu m emitting aperture.<>

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; semiconductor lasers; 800 mW; DBR laser; InGaAs; broad area power amplifier; coherent beam expander; distributed-Bragg-reflector; edge-emitting configuration; emitting aperture; integrated optics; monolithically integrated broad-area master oscillator power amplifiers; preamplifier; semiconductor laser diodes; single spectral mode; single-lobe output; spatial mode; transverse beam divergence; uniform phase; Apertures; Diffraction; Distributed Bragg reflectors; Distributed amplifiers; High power amplifiers; Laser beams; Laser modes; Oscillators; Power lasers; Preamplifiers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.215270

Filename

215270