DocumentCode :
899372
Title :
A photonic parallel memory with air-bridge interconnections for large scale integration
Author :
Chino, T. ; Adachi, H. ; Matsuda, K.
Author_Institution :
Matsushita Electric Ind. Co. Ltd., Osaka, Japan
Volume :
5
Issue :
5
fYear :
1993
fDate :
5/1/1993 12:00:00 AM
Firstpage :
548
Lastpage :
551
Abstract :
Surface passivation films for the photonic parallel memory (PPM) are studied, motivated by the fact that the dissipation current of the PPM is strongly influenced by the surface conditions. Several passivation films are investigated, and the PPM covered with the native oxide showed the lowest holding current. To utilize the native oxide as a passivation film, an air-bridge interconnection structure was fabricated with dry etching. It was found that some surface treatment is required after dry etching to obtain holding current comparable with that of the PPM formed with wet chemical etching and covered with native oxide.<>
Keywords :
etching; integrated optics; integrated optoelectronics; large scale integration; optical bistability; optical information processing; optical interconnections; optical storage; optical switches; parallel architectures; InP; LSI; air-bridge interconnections; dissipation current; dry etching; holding current; large scale integration; native oxide; optical bistability; optical switches; photonic parallel memory; semiconductors; surface conditions; surface passivation films; surface treatment; Chemicals; Dry etching; Large scale integration; Optical devices; Passivation; Plasma applications; Plasma chemistry; Surface treatment; Switches; Wet etching;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.215277
Filename :
215277
Link To Document :
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