Title :
Simple models for high-frequency MESFETs and comparison with experimental results
Author :
Oxley, C.H. ; Holden, A.J.
Author_Institution :
Plessey Microwave Limited, Towcester, UK
fDate :
10/1/1986 12:00:00 AM
Abstract :
The paper presents a distributed model for high-frequency MESFETs and compares experimentalS-parameter measurements to 26 GHz with distributed and lumped models. The concept of distributed effects within a MESFET is used to modify the Fukui noise model, and good agreement has been obtained between high-frequency (35 GHz) noise measurements and the modified Fukui analysis.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; solid-state microwave devices; 26 GHz; 35 GHz; Fukui noise model; GaAs; S-parameter measurements; distributed model; high frequency MESFET; lumped models; microwave device;
Journal_Title :
Microwaves, Antennas and Propagation, IEE Proceedings H
DOI :
10.1049/ip-h-2.1986.0061
