• DocumentCode
    900106
  • Title

    Improved photoemitters using GaAs and InGaAs

  • Author

    Uebbing, J.J. ; Bell, R.L.

  • Volume
    56
  • Issue
    9
  • fYear
    1968
  • Firstpage
    1624
  • Lastpage
    1625
  • Abstract
    A luminous sensitivity of 900 µA/lm in a GaAs-Cs-O photocathode, and a photothreshold of 1.16 eV in an InGaAs photocathode with Cs-O or Cs-H2O surface layers, are reported.
  • Keywords
    Anisotropic magnetoresistance; Cathodes; Coatings; Doping; Gallium arsenide; Indium gallium arsenide; Optical resonators; Photonic band gap; Polarization; Surface treatment;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1968.6682
  • Filename
    1448612
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=900106