DocumentCode
900121
Title
Orientation studies of the microwave emission from InSb
Author
Porter, W.A. ; Ferry, David K.
Volume
56
Issue
9
fYear
1968
Firstpage
1625
Lastpage
1626
Abstract
Microwave emission from n-InSb at 77°K is investigated. Crystalline orientations of 〈100〉, 〈110〉, and 〈111〉 are used to determine dependence of emission on these orientations. Considerable anistropy of emission is observed as B is rotated in the plane perpendicular to E.
Keywords
Doping; Electrons; Gallium arsenide; Heat treatment; Indium phosphide; Photonic band gap; Surface fitting; Surface treatment; Temperature; Zinc;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1968.6683
Filename
1448613
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