DocumentCode
901208
Title
A CAD-oriented non-quasi-static approach for the transient analysis of MOS ICs
Author
Turchetti, Claudio ; Mancini, Paolo ; Masetti, Guido
Volume
21
Issue
5
fYear
1986
fDate
10/1/1986 12:00:00 AM
Firstpage
827
Lastpage
836
Abstract
The proposed approach, which considers the MOS transistor as a four-terminal device and takes into account short-channel effects, has been implemented in the circuit simulator SPICE. It is shown that the results predicted from this CAD-oriented approach are in good agreement with those achievable with a numerical procedure. It is also found that, using the new model in SPICE, the evaluation of transients in some high-precision circuits gives results significantly different from those expected from standard quasi-static formulations.
Keywords
Circuit CAD; Circuit analysis computing; Field effect integrated circuits; Transients; circuit CAD; circuit analysis computing; field effect integrated circuits; transients; Analog integrated circuits; Analytical models; Circuit simulation; Differential equations; MOS devices; MOS integrated circuits; MOSFETs; SPICE; Solid state circuits; Transient analysis;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1986.1052614
Filename
1052614
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