DocumentCode :
901208
Title :
A CAD-oriented non-quasi-static approach for the transient analysis of MOS ICs
Author :
Turchetti, Claudio ; Mancini, Paolo ; Masetti, Guido
Volume :
21
Issue :
5
fYear :
1986
fDate :
10/1/1986 12:00:00 AM
Firstpage :
827
Lastpage :
836
Abstract :
The proposed approach, which considers the MOS transistor as a four-terminal device and takes into account short-channel effects, has been implemented in the circuit simulator SPICE. It is shown that the results predicted from this CAD-oriented approach are in good agreement with those achievable with a numerical procedure. It is also found that, using the new model in SPICE, the evaluation of transients in some high-precision circuits gives results significantly different from those expected from standard quasi-static formulations.
Keywords :
Circuit CAD; Circuit analysis computing; Field effect integrated circuits; Transients; circuit CAD; circuit analysis computing; field effect integrated circuits; transients; Analog integrated circuits; Analytical models; Circuit simulation; Differential equations; MOS devices; MOS integrated circuits; MOSFETs; SPICE; Solid state circuits; Transient analysis;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1986.1052614
Filename :
1052614
Link To Document :
بازگشت