• DocumentCode
    901460
  • Title

    Pinch-off voltage shifts in MOSFET´s at helium temperatures

  • Author

    Bostian, C.W.

  • Volume
    56
  • Issue
    11
  • fYear
    1968
  • Firstpage
    2085
  • Lastpage
    2085
  • Abstract
    The pinch-off voltage of several commercial silicon MOSFET types was measured at room temperature and at 4.2°K. Typically, room temperature and 4.2°K values differed in magnitude by approximately one volt.
  • Keywords
    Boundary conditions; FETs; Helium; Intrusion detection; MOSFET circuits; Message-oriented middleware; Silicon; Temperature measurement; Temperature sensors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1968.6807
  • Filename
    1448737
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=901460