DocumentCode :
901472
Title :
0.5 mu m gate length InP/In0.75Ga0.25As/InP pseudomorphic HEMT with high DC and RF performance
Author :
Mesquida Kusters, A. ; Wuller, R. ; Brittner, S. ; Kohl, A. ; Heime, K.
Author_Institution :
RWTH Aachen, Germany
Volume :
29
Issue :
10
fYear :
1993
fDate :
5/13/1993 12:00:00 AM
Firstpage :
841
Lastpage :
842
Abstract :
High performance InP/In0.75Ga0.25As/InP pseudomorphic double heterojunction (DH) HEMTs with a gate length of 0.5 mu m are reported. Both DC and RF characteristics of this new type of Al-free HEMT demonstrate its suitability for microwave applications.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor technology; solid-state microwave devices; 0.5 micron; DC performance; InP-In 0.75Ga 0.25As-InP; LP-MOVPE; RF performance; double heterojunction; gate length; microwave applications; pseudomorphic HEMT;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930562
Filename :
216261
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=901472
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