Title :
Anomalous enhancement of substrate terminal current beyond pinch-off in silicon n-channel MOS transistors and its related phenomena
Author :
Nakahara, Mizuki ; Iwasawa, Hiroshi ; Yasutake, K.
Abstract :
Anomalous enhancement of substrate terminal current is observed in n-channel silicon MOS transistors beyond pinch-off, but not in p-channel devices. This phenomenon is interpreted as the hole current flow caused by the impact ionization of trapped electrons in Si-SiO2interface states and of valenced electrons at the pinched-off channel of the silicon surface.
Keywords :
Current measurement; Electron traps; Gain measurement; Heating; Impact ionization; MOSFETs; Silicon; Space vector pulse width modulation; Testing; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6810
