• DocumentCode
    901532
  • Title

    InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions

  • Author

    Lin, C.L. ; Farley, C.W. ; Seabury, C.W. ; Higgins, J.A. ; Kirchner, Peter D. ; Woodall, Jerry M. ; Asbeck, P.M.

  • Volume
    29
  • Issue
    10
  • fYear
    1993
  • fDate
    5/13/1993 12:00:00 AM
  • Firstpage
    850
  • Lastpage
    851
  • Abstract
    High performance InP/InGaAs double heterojunction bipolar transistors (DHBTs) incorporating carbon-doped bases and graded base-collector junctions implemented using a short period superlattice were grown by gas source MBE (GSMBE). Base hole concentrations up to 1.6*1019 cm-3 were obtained, using CCl4 as the dopant source. Transistors with 2*10 mu m2 emitters achieved ft and fmax values up to 76 and 82 GHz, respectively. These devices demonstrate state of the art values of fmax.
  • Keywords
    III-V semiconductors; carbon; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 76 GHz; 82 GHz; CCl 4; III-V semiconductors; InP-InGaAs:C; dopant source; double heterojunction bipolar transistors; gas source MBE; organic compounds; short period superlattice; superlattice graded base-collector junctions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930568
  • Filename
    216267
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=901532