DocumentCode
901651
Title
CMOS/SOS 4K RAMs Hardened to 100 Krads(Si)
Author
Napoli, L.S. ; Smeltzer, R.K. ; Yeh, J.L. ; Heagerty, W.F.
Author_Institution
RCA Laboratories Princeton, NJ 08540
Volume
29
Issue
6
fYear
1982
Firstpage
1707
Lastpage
1711
Abstract
Two CMOS/SOS 4K memories were fabricated with a recently developed, hardened SOS process. Memory functionality after radiation doses well in excess of 100 Krads(Si) was demonstrated. The critical device processing steps were identified. The radiation-induced failure mode of the memories is understood in terms of the circuit organization and the radiation behavior of the individual transistors in the memories.
Keywords
CMOS process; CMOS technology; Circuits; Laboratories; Leakage current; Oxidation; Radiation hardening; Random access memory; Silicon; Substrates;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1982.4336433
Filename
4336433
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