Title :
Rapid Annealing in Advanced Bipolar Microcircuits
Author :
Wrobel, T.F. ; Evans, D.C.
Author_Institution :
Sandia National Laboratories Post Office Box 5800 Albuquerque, New Mexico 87185
Abstract :
Several new device technologies were characterized for rapid-annealing following a burst of fast neutrons. The annealing responses for the "breakout" devices were found to be consistent with those predicted from existing models. An analytical expression derived from the model is presented. Several of the "breakout" devices studied indicated that digital integrated circuits produced from some of the technologies studied could have neutron hardness levels in excess of 1×1015 nvt (E > 10 keV). In addition the neutron response data for FAST and ALS nand gates are presented.
Keywords :
Annealing; Degradation; Electron emission; Integrated circuit modeling; Integrated circuit technology; Isolation technology; Laboratories; Neutrons; Space charge; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1982.4336436
