• DocumentCode
    901951
  • Title

    Comments on `A linear NMOS depletion resistor and its application in an integrated amplifier´

  • Author

    Czarnul, Zdzislaw

  • Volume
    22
  • Issue
    1
  • fYear
    1987
  • fDate
    2/1/1987 12:00:00 AM
  • Firstpage
    124
  • Lastpage
    127
  • Abstract
    For the original article see ibid., vol.SC-19, no.6, p.923-8 (1984). A detailed relation for the MOS drain current in the triode region is proposed for the analysis of a linear NMOS depletion resistor (DEPR) described by J.N. Babanezhad and G.C. Temes. Using this, the experimental results shown by the original authors become clearer and easier to interpret. In addition, the conditions of the DEPR nonlinearity minimum are discussed.
  • Keywords
    Field effect devices; Field effect integrated circuits; Resistors; field effect devices; field effect integrated circuits; resistors; Circuit testing; Gallium arsenide; Integrated circuit testing; Logic circuits; MESFET integrated circuits; MOS devices; MOSFETs; Propagation delay; Resistors; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1987.1052686
  • Filename
    1052686
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=901951