DocumentCode
902017
Title
Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser
Author
Baba, Toshihiko ; Yogo, Y. ; Suzuki, Kenji ; Koyama, Fumio ; Iga, Kenichi
Author_Institution
Tokyo Inst. of Technol., Yokohama, Japan
Volume
29
Issue
10
fYear
1993
fDate
5/13/1993 12:00:00 AM
Firstpage
913
Lastpage
914
Abstract
The first near room temperature continuous wave lasing operation of a 1.3 mu m GaInAsP/InP surface emitting laser has been achieved by employing a buried heterostructure and a novel MgO/Si heatsink mirror. A dramatic reduction of threshold current at room temperature and a circular narrow output beam were demonstrated.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor lasers; 1.3 micron; CW lasing operation; GaInAsP-InP; MgO-Si heatsink mirror; buried heterostructure; circular narrow output beam; continuous wave; room temperature; surface emitting laser; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930609
Filename
216310
Link To Document