Title :
New method for extracting collector series resistance of bipolar transistors
Author :
Verzellesi, G. ; Turetta, R. ; Cappellin, M. ; Pavan, Paolo ; Chantre, Alain ; Zanoni, Enrico
Author_Institution :
Padova Univ., Italy
fDate :
5/13/1993 12:00:00 AM
Abstract :
A new technique for extracting the collector series resistance of bipolar transistors is presented. The method is based on impact-ionisation-induced base current reversal and provides the value which the collector resistance assumes in the forward active region of operation.
Keywords :
bipolar transistors; electric resistance; impact ionisation; semiconductor device testing; bipolar transistors; collector series resistance; forward active region; impact-ionisation-induced base current reversal;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930621
