• DocumentCode
    902157
  • Title

    28-51 GHz dynamic frequency divider based on 0.15 mu m T-gate Al0.2Ga0.8As/In0.25Ga0.75As MODFETs

  • Author

    Thiede, A. ; Tasker, P. ; Hulsmann, A. ; Kohler, K. ; Bronner, W. ; Schlechtweg, M. ; Berroth, M. ; Braunstein, J. ; Nowotny, U.

  • Author_Institution
    Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
  • Volume
    29
  • Issue
    10
  • fYear
    1993
  • fDate
    5/13/1993 12:00:00 AM
  • Firstpage
    933
  • Lastpage
    934
  • Abstract
    The design and performance of a 28-51 GHz dynamic frequency divider based on pseudomorphic Al0.2Ga0.8As/In0.25Ga0.75As MODFETs with 0.15 mu m mushroom-shaped gates are presented. The circuit has a power consumption of approximately 440 mW and a chip area of approximately 200*220 mu m2.
  • Keywords
    III-V semiconductors; aluminium compounds; digital integrated circuits; field effect integrated circuits; frequency dividers; gallium arsenide; high electron mobility transistors; indium compounds; 0.15 micron; 28 to 51 GHz; 440 mW; Al 0.2Ga 0.8As-In 0.25Ga 0.75As; MODFETs; T-gate; dynamic frequency divider; mushroom-shaped gates; power consumption; pseudomorphic devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930622
  • Filename
    216323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=902157