• DocumentCode
    902234
  • Title

    Direct optical injection locking of monolithically integrated In0.53Ga0.47As/In0.52Al0.48As MODFET oscillators

  • Author

    Yang, Dong ; Bhattacharya, P.K. ; Brock, T.

  • Author_Institution
    Michigan Univ., Ann Arbor, MI, USA
  • Volume
    29
  • Issue
    11
  • fYear
    1993
  • fDate
    5/27/1993 12:00:00 AM
  • Firstpage
    944
  • Lastpage
    945
  • Abstract
    The authors have fabricated monolithically integrated In0.53Ga0.47As/In0.52Al0.48As 0.25 mu m gate modulation-doped field effect transistor (MODFET) oscillators. The results of direct optical subharmonic injection locking of these oscillator circuits at 10.159 and 19.033 GHz are presented.
  • Keywords
    III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave oscillators; 0.25 micron; 10.159 GHz; 19.033 GHz; In 0.53Ga 0.47As-In 0.52 Al 0.48As; MODFET oscillators; SHF; direct subharmonic locking; field effect transistor; modulation-doped; monolithically integrated; optical injection locking;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930629
  • Filename
    216334
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=902234