DocumentCode
902268
Title
25 Gbit/s selector module using 0.2 mu m GaAs MESFET technology
Author
Ohhata, M. ; Togashi, Minoru ; Murata, Kentaro ; Yamaguchi, Satarou
Author_Institution
NTT LSI Labs., Kanagawa, Japan
Volume
29
Issue
11
fYear
1993
fDate
5/27/1993 12:00:00 AM
Firstpage
950
Lastpage
951
Abstract
A high-speed selector module has been developed. It is constructed from a selector IC mounted in a ceramic package, a power supply unit, phase shifters, and coaxial cables. The IC was designed using LSCFL and fabricated with 0.2 mu m gate length GaAs MESFETs. The selector module operated above 25 Gbit/s. It is expected to be applied to high-speed IC measurements.
Keywords
Schottky gate field effect transistors; digital integrated circuits; field effect integrated circuits; integrated circuit testing; modules; multiplexing equipment; packaging; test equipment; 0.2 micron; 25 Gbit/s; GaAs; LSCFL; MESFET technology; ceramic package; coaxial cables; high-speed IC measurements; low-power source coupled FET logic; multiplexing operation; phase shifters; power supply unit; selector module;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930633
Filename
216337
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