• DocumentCode
    902500
  • Title

    High-efficiency operation of AlGaAs/GaAs power heterojunction bipolar transistors at low collector supply voltage

  • Author

    Matsuoka, Y. ; Yamahata, S. ; Nakatsugawa, M. ; Muraguchi, M. ; Ishibashi, T.

  • Author_Institution
    MTT LSI Labs., Atsugi, France
  • Volume
    29
  • Issue
    11
  • fYear
    1993
  • fDate
    5/27/1993 12:00:00 AM
  • Firstpage
    982
  • Lastpage
    984
  • Abstract
    High-fmax (>160 GHz) AlGaAs/GaAs heterojunction bipolar transistors are developed using power-oriented layer structures and a selfalignment fabrication technology characterised by a base-metal overlaid structure. The fabricated power transistors tested at 2.6 GHz yield maximum power-added efficiencies of 69 and 60% at low supply voltages of 3 and 1.5V, respectively.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; power transistors; solid-state microwave devices; 1.5 V; 160 GHz; 2.6 GHz; 3 V; 60 percent; 69 percent; AlGaAs-GaAs; base-metal overlaid structure; low collector supply voltage; maximum frequency of oscillation; microwave power applications; power heterojunction bipolar transistors; power-added efficiencies; power-oriented layer structures; selfalignment fabrication technology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930654
  • Filename
    216358
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=902500