DocumentCode :
902666
Title :
The relation between the current constriction and the area of a transistor
Author :
Kisaki, H.
Volume :
57
Issue :
2
fYear :
1969
Firstpage :
218
Lastpage :
219
Abstract :
The relationship between rate of current change and temperature change in the small thermally weak region of a transistor, which is caused by thermal feedback mechanism, was discussed by Scarlett and Shockley [1] and Bergmann and Gerstner [2]. This relationship is given quantitatively as a function of the total area and stabilizing resistance of a transistor.
Keywords :
Circuits; Crystals; Differential equations; Doping; Feedback; Heat sinks; Power transistors; Temperature; Thermal resistance; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1969.6923
Filename :
1448853
Link To Document :
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