DocumentCode
902732
Title
High-power Gunn-effect oscillators using epitaxial GaAs
Author
King, Grant W. ; Wasse, M.P.
Author_Institution
Standard Telecommunication Laboratories Ltd., Harlow, UK
Volume
2
Issue
8
fYear
1966
fDate
8/1/1966 12:00:00 AM
Firstpage
314
Lastpage
315
Abstract
The construction of oscillators from thin epitaxial layers of GaAs is described. Tests on several experimental samples have been made, and peak powers of over 14W have been obtained at C band. Curves are presented relating the drive voltage to parameters such as frequency, efficiency and power output for a typical sample.
Keywords
Gunn effect; oscillators; semiconductor devices; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19660264
Filename
4233196
Link To Document