Bistable field effect transistor (BISFET): a novel heterostructure device

The operation of a novel heterostructure device, the bistable field effect transistor (BISFET), is described. This device contains a positive feedback loop between the gate and source terminals, which is expected to lead to transitions between high and low current states with varying drain bias. These abrupt transitions should generate substantial hysteresis in the output characteristics, making the device bistable. The transition voltages and hysteresis are expected to increase with increasing gate bias.