DocumentCode
903329
Title
Diffusion capacitance and laser diodes
Author
Strologas, John ; Hess, Karl
Author_Institution
Phys. Dept., Univ. of Illinois, Urbana, IL, USA
Volume
51
Issue
3
fYear
2004
fDate
3/1/2004 12:00:00 AM
Firstpage
506
Lastpage
509
Abstract
The well-known diffusion capacitance is critical in determining the modulation response of p-n junctions and particularly of laser diodes. In this brief, we investigate the diffusion capacitance of a diode, as a function of the physical length of the diode and the carrier lifetimes in the narrow active region. We show that diode length and lifetime together, and not just the lifetime (which is well known), determine the bandwidth of the diode.
Keywords
capacitance; p-n junctions; semiconductor device measurement; semiconductor device models; semiconductor diodes; semiconductor junctions; semiconductor lasers; carrier lifetime; carrier lifetimes; depletion capacitance; diffusion capacitance; diode bandwidth; diode length; laser diodes; modulation response; narrow active region; p-n junctions; Assembly; Capacitance; Diode lasers; Fabrication; Nanocrystals; Nanoparticles; Nonhomogeneous media; Polymer films; Self-assembly; Surface resistance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2003.822345
Filename
1268281
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