Title :
100 Watt Super Audio Amplifier Using New Mos Devices
Author :
Sampei, Tohru ; Ohashi, Shin-ichi ; Ochi, Shikayuki
Author_Institution :
Consumer Products Research Center
Abstract :
A 100 watt audio amplifier was recently developed using a new Power MOSFET which was developed by our MOS Device Group. The Power MOSFET has several advantages over bipolar transistors. It has good frequency response, no carrier storage delay, thermal stability, no secondary breakdown and high input impedance.
Keywords :
Bipolar transistors; Delay; Electric breakdown; Frequency response; Impedance; MOS devices; MOSFET circuits; Power MOSFET; Power amplifiers; Thermal stability;
Journal_Title :
Consumer Electronics, IEEE Transactions on
DOI :
10.1109/TCE.1977.266916
