DocumentCode :
903976
Title :
Effect of operating conditions on reverse gate current of junction f.e.t.s
Author :
Fowler, E.P.
Author_Institution :
UKAEA, Winfrith, UK
Volume :
4
Issue :
11
fYear :
1968
Firstpage :
216
Lastpage :
217
Abstract :
With some types of nchannel junction f.e.t.s the measurement of gate leakage current under operating conditions (with a current flowing in the channel) has shown a very much higher value than would be expected from the maker´s specification of IGSS. The excess gate current which flows at higher channel voltage is proportional to the drain current and has a small negative temperature coefficient.
Keywords :
transistors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19680164
Filename :
4233408
Link To Document :
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