DocumentCode
904112
Title
Simulation-oriented noise model for MOS devices
Author
Nicollini, Germano ; Pancini, Davide ; Pernici, Sergio
Volume
22
Issue
6
fYear
1987
fDate
12/1/1987 12:00:00 AM
Firstpage
1209
Lastpage
1212
Abstract
A formula for the noise in MOS devices particularly suited to general-purpose circuit simulation programs is described. It is valid in every part of the MOS I-V curves. The expression for the thermal noise is derived from a theoretical analysis, and the flicker-noise expression is empiric.
Keywords
Circuit analysis computing; Field effect integrated circuits; Metal-insulator-semiconductor devices; Random noise; Thermal noise; circuit analysis computing; field effect integrated circuits; metal-insulator-semiconductor devices; random noise; thermal noise; Capacitance; Circuit noise; FETs; MOS devices; Optical amplifiers; Optical noise; Optical receivers; Photodiodes; Semiconductor device noise; Stimulated emission;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1987.1052878
Filename
1052878
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