• DocumentCode
    904320
  • Title

    MNOS memory transistors in simple memory arrays

  • Author

    Carlstedt, L. Gunnar ; Svensson, Christer M.

  • Volume
    7
  • Issue
    5
  • fYear
    1972
  • fDate
    10/1/1972 12:00:00 AM
  • Firstpage
    382
  • Lastpage
    388
  • Abstract
    The basic properties of MNOS memory transistors as digital memory elements are reviewed. Optimization procedures for obtaining maximum memory retention are presented and possible arrangements of memory transistors in simple arrays and writing and reading procedures for such arrays are discussed.
  • Keywords
    Metal-insulator-semiconductor devices; Optimisation; Semiconductor storage devices; metal-insulator-semiconductor devices; optimisation; semiconductor storage devices; Charge carrier processes; Charge carriers; MOSFETs; PROM; Random access memory; Read-write memory; Silicon; Thickness control; Threshold voltage; Writing;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1972.1052897
  • Filename
    1052897
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=904320