Basewidth modulation and nonlinear β in CADA models

A method is presented for modifying the expression for common-emitter gain in an Ebers-Moll model to include the effects of basewidth modulation and nonlinear β. The technique is one that most electrical engineers will find natural because the modified gain relationships are determined entirely from the collector characteristics of the device modeled. The modeling technique is applied to a medium-power silicon transistor; the measured collector characteristics used to generate the model are compared with collector characteristics computed from the resulting model.