DocumentCode
904433
Title
De behavior of Si diodes in magnetic fields
Author
Kitchen, W.J., Jr.
Volume
57
Issue
5
fYear
1969
fDate
5/1/1969 12:00:00 AM
Firstpage
802
Lastpage
803
Abstract
The effect of applying a transverse magnetic field on forward biased Si p-n junctions is investigated, and the results obtained suggest the possibility of employing magnetic measurements to evaluate the physical properties of semiconductor devices.
Keywords
Magnetic field measurement; Magnetic fields; Magnetic materials; Magnetic properties; Resistors; Semiconductor devices; Semiconductor diodes; Semiconductor materials; Silicon; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1969.7080
Filename
1449010
Link To Document