DocumentCode
904570
Title
CW oscillations in GaAs planar-type bulk diodes
Author
Sekido, Keiko ; Takeuchi, T. ; Hasegawa, Fumihiro ; Kikuchi, Shinji
Volume
57
Issue
5
fYear
1969
fDate
5/1/1969 12:00:00 AM
Firstpage
815
Lastpage
816
Abstract
CW Gunn oscillations at frequencies from 0.5 GHz to over 1 GHz have been obtained with GaAs bulk diodes constructed from an epitaxial n layer grown on semi-insulating substrates. Observations of current waveforms have been made for both transit-time and delayed-domain modes. CW microwave power of 12 mW has been obtained at 0.9 GHz.
Keywords
Diodes; Electrodes; Epitaxial layers; Frequency; Gallium arsenide; Gunn devices; Microwave devices; Propagation delay; Substrates; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1969.7092
Filename
1449022
Link To Document