Title :
Characteristics of δ-doped FETs in GaAs
Author :
Nutt, H.C. ; Board, K. ; Smith, R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Wales Univ., Swansea, UK
fDate :
12/1/1991 12:00:00 AM
Abstract :
Experimental data is presented on several batches of δ-doped field effect transistors grown by molecular beam epitaxy in GaAs. The expected linear transfer characteristics were observed and values of extrinsic transconductance comparable with the best values reported elsewhere were obtained. Excellent consistency was obtained between devices fabricated on the same layer, and between batches grown on different layers. Depletion and enhancement characteristics are shown. Reasonable agreement was obtained between the measured characteristics and a simple theory based on a piecewise linear approximation to the velocity-field curve
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; molecular beam epitaxial growth; semiconductor doping; δ-doped FETs; GaAs; MESFET; Schottky gate; depletion characteristics; enhancement characteristics; extrinsic transconductance; field effect transistors; linear transfer characteristics; molecular beam epitaxy; piecewise linear approximation; velocity-field curve;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
