• DocumentCode
    905353
  • Title

    Microwave amplification with GaAs avalanche diodes

  • Author

    Kuno, H.J. ; Collard, J.R. ; Gobat, A.

  • Author_Institution
    Radio Corporation of America, Microwave Applied Research Laboratory, David Sarnoff Research Center, Princeton, USA
  • Volume
    4
  • Issue
    24
  • fYear
    1968
  • Firstpage
    540
  • Lastpage
    542
  • Abstract
    Experimental results obtained with an Xband reflection amplifier using vapour-phase epitaxial GaAs p¿n junctions biased into avalanche breakdown are presented. Single-side-band noise figures of 17dB, power gains in excess of 30dB, and a high dynamic range have been repeatedly measured. The noise figures obtained with a large number of these diodes are significantly lower than those reported for Si or Ge diodes.
  • Keywords
    amplifiers; avalanche diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19680421
  • Filename
    4233547
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=905353