1/f voltage noise in silicon planar bipolar transistors

Measurements on silicon planar transistors in the frequency range 1 Hz¿1 kHz have shown conclusively that 1/f noise is present on the equivalent input noise-voltage generator. In some samples of transistors, correlation between the 1/f components of voltage and current noise was detected. In one sample, an estimate of the correlation coefficient was made, the result being a coefficient of approximately ¿0.1.