High power semiconductor laser injection-locking at 1.3 μm

Author

Andrekson, Peter A. ; Olsson, N. Anders ; Tanbun-Ek, Tawee ; Washington, M.A.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

10

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

903

Lastpage

907

Abstract

The injection-locking properties of a high power antireflection coated 1.3-μm slave laser subjected to relatively low injection powers from a distributed feedback (DFB) laser and from a tunable external cavity laser have been investigated. Narrow linewidth operation (~40 kHz) was demonstrated and the tuning range within two slave modes (~10 GHz) and over the gain profile (~40 nm) was investigated. In addition, the tracking properties of the slave laser for both frequency and phase modulated injected light was evaluated at 1 Gb/s, in which the fidelity was judged from bit-error-rate measurements. The maximum locked power under 1 Gb/s frequency modulation was about 145 mW, limited by the available master power; approximately 300 μW was injected into the slave

Keywords

antireflection coatings; frequency modulation; laser mode locking; optical films; optical modulation; optical pumping; phase modulation; semiconductor junction lasers; 1 Gbit/s; 1.3 micron; 145 mW; 300 muW; DFB lasers; IR; InGaAsP; bit-error-rate measurements; distributed feedback; frequency modulated; gain profile; high power antireflection coated; low injection powers; master power; maximum locked power; narrow linewidths; phase modulated; semiconductor diode lasers; semiconductor laser injection-locking; slave laser; slave modes; tracking properties; tunable external cavity laser; tuning range; Distributed feedback devices; Frequency; Laser feedback; Laser mode locking; Laser modes; Laser tuning; Phase modulation; Power lasers; Semiconductor lasers; Tunable circuits and devices;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.144911

Filename

144911